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Operation and Modeling of the MOS Transistor (The Oxford Series in Electrical and Computer Engineering)
Operation and Modeling of the MOS Transistor has become a standard in academia and industry.
Operation and Modeling of the MOS Transistor (The Oxford Series in Electrical and Computer Engineering)
Item #: 4256058

Operation and Modeling of the MOS Transistor (The Oxford Series in Electrical and Computer Engineering)

Item #: 4256058

NZD 644

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Operation and Modeling of the MOS Transistor has become a standard in academia and industry.
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What Stands Out

Comprehensive Coverage
This edition delves deeply into MOS transistor theory, offering extensive explanations and models, ideal for both students and professionals exploring advanced topics in electrical engineering.
Updated Examples
Inclusion of the latest real-world applications and examples ensures that readers can grasp practical implementations, bridging gaps between theory and practice in the ever-evolving field of electronics.
User-Friendly Layout
The well-structured format with clear illustrations makes complex topics accessible, facilitating easier understanding for learners and enhancing the educational experience in advanced electrical engineering courses.

Product Details

Shop Operation and Modeling of the MOS Transistor (The Oxford Series in Electrical and Computer Engineering) online at a best price in New Zealand. 0195170156
  • 3rd edition of a highly acclaimed text on the MOS transistor
  • Provides a thorough treatment of the MOS transistor
  • Key element of modern microelectronic chips
  • Standard in academia and industry
  • Extensively revised and updated
  • Part of The Oxford Series in Electrical and Computer Engineering
Publisher Oxford University Press
Publication date September 24, 2010
Edition 3rd
Language English
Print length 752 pages
ISBN-10 0195170156
ISBN-13 978-0195170153
Item Weight 2.9 pounds (1.32 kg)
Dimensions 9.3 x 7.6 x 1.3 inches (23.6 x 19.3 x 3.3 cm)

Who Should Buy?

Suitable For
  • Engineering Students

    Ideal for undergraduate and graduate students studying electrical engineering, providing comprehensive insights into MOS transistor operation.

  • Industry Professionals

    Useful for engineers and designers working with MOS technology in practical applications, enhancing their modeling skills.

  • Research Scholars

    Beneficial for researchers focusing on semiconductor devices, offering detailed theory and advanced modeling techniques.

Not Suitable For
  • Casual Readers

    Not suitable for casual readers or hobbyists lacking a technical background in electrical engineering or physics.

Product Description

Operation and Modeling of the MOS Transistor (The Oxford Series in Electrical and Computer Engineering)

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Microelectronics Editorial Review

The third edition of 'Operation and Modelling of the MOS Transistor' offers an exceptional insight into the physics behind MOS transistors, with an emphasis on Si bulk MOS transistors, requiring readers to be familiar with differential and integral calculus and have access to mathematical software. The book is comprehensive, covering every nuance of the MOS transistor, but written from a physics perspective rather than an engineering one, so readers should not expect applications or useful circuits. The book is available in hardcover format, but it has issues in terms of binding quality. Despite the price, this book is Considered an excellent investment by most readers. It is highly-regarded an upgraded version of the second edition, which had excellent reviews.

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Pros

  • Exceptional insight into MOS transistors' physics
  • Comprehensive, covering every nuance of the MOS transistor
  • Rigorous mathematical derivation and in-depth intuitive explanation
  • Reliable textbook on the subject
  • Extensively revised from second edition
  • Bibliography is available to cover missing topics
  • Consistent symbol usage throughout the book
  • The accompanying lecture is available online for purchase

Cons

  • Written from a physics perspective

Product Price History

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